statistiche ricercatore

Continente	#
NA - Nord America	731
EU - Europa	548
AS - Asia	533
SA - Sud America	104
AF - Africa	7
Continente sconosciuto - Info sul continente non disponibili	6
OC - Oceania	1
Totale	1.930

Nazione	#
US - Stati Uniti d'America	716
DE - Germania	241
SG - Singapore	228
CN - Cina	145
UA - Ucraina	92
BR - Brasile	86
SE - Svezia	76
VN - Vietnam	39
FR - Francia	34
IN - India	28
IE - Irlanda	26
IT - Italia	24
JP - Giappone	19
FI - Finlandia	17
ID - Indonesia	17
RU - Federazione Russa	12
HK - Hong Kong	11
IQ - Iraq	9
CA - Canada	7
AR - Argentina	6
BD - Bangladesh	6
GB - Regno Unito	6
EU - Europa	5
TR - Turchia	5
CH - Svizzera	4
JO - Giordania	4
MX - Messico	4
BO - Bolivia	3
CL - Cile	3
UZ - Uzbekistan	3
VE - Venezuela	3
AZ - Azerbaigian	2
DZ - Algeria	2
EC - Ecuador	2
EE - Estonia	2
JM - Giamaica	2
KR - Corea	2
LB - Libano	2
MA - Marocco	2
MY - Malesia	2
NP - Nepal	2
PK - Pakistan	2
PL - Polonia	2
PT - Portogallo	2
ZA - Sudafrica	2
A2 - ???statistics.table.value.countryCode.A2???	1
AE - Emirati Arabi Uniti	1
AM - Armenia	1
BE - Belgio	1
BG - Bulgaria	1
DK - Danimarca	1
ES - Italia	1
ET - Etiopia	1
GR - Grecia	1
HU - Ungheria	1
IL - Israele	1
IR - Iran	1
KH - Cambogia	1
LT - Lituania	1
LV - Lettonia	1
MC - Monaco	1
NL - Olanda	1
NZ - Nuova Zelanda	1
OM - Oman	1
PA - Panama	1
PH - Filippine	1
TT - Trinidad e Tobago	1
UY - Uruguay	1
Totale	1.930

Nome	#
Molecular gap and energy level diagram for pentacene adsorbed on filled d-band metal surfaces	158
Diffraction analysis of a disordered surface, modelled on a probability distribution of reconstructed blocks: Bi/Si(001)-(2xn), n = 6.45	156
Adsorption sites at Cs nanowires grown on the InAs(110) surface	152
Dynamics of the Si(100) surface	141
Structure and missing-dimer probability distribution of the (2 x n)Bi-induced Si(001) surface	140
Interaction strength and molecular orientation of a single layer of pentacene in organic-metal interface and organic-organic heterostructures	137
Surface-assisted reactions toward formation of graphene nanoribbons on Au(110) surface	129
Dynamics-induced surface metallization of Si(100)	124
BISMUTH-INDUCED ELECTRONIC STATES AT (2X1)-BI/III-V(110) INTERFACES	123
Electronic properties of (2xn)-Bi reconstructions on Si(100)	121
OVERLAYER GROWTH AND ELECTRONIC PROPERTIES OF THE BI/GASB(11O) INTERFACE	121
Electronic properties of the Bi/Si(100) interface	119
BISMUTH ON GASB(110): ELECTRONIC AND DIELECTRIC PROPERTIES	116
Surface electronic structure at Si(100)-(2x1)	104
Core-level photoemission study of 2D ordered Bi/Si(100) interfaces	96
Totale	1.937

	Totale	Lug	Ago	Sett	Ott	Nov	Dic	Gen	Feb	Mar	Apr	Mag	Giu
2020/2021	17	0	0	0	0	0	0	0	0	0	0	16	1
2021/2022	116	9	17	2	7	2	5	1	18	11	7	13	24
2022/2023	267	35	48	17	20	26	36	2	31	41	1	5	5
2023/2024	104	6	41	0	16	2	12	0	0	0	3	16	8
2024/2025	221	5	3	15	0	13	18	16	18	29	31	40	33
2025/2026	631	118	10	39	55	128	32	128	28	33	55	5	0
Totale													1.937

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