High-temperature surface metallization of Si(100) is observed at T > 900 K by high-resolution electron-energy-loss and ultraviolet photoemission spectroscopy. Metallization takes place well below the incomplete surface melting temperature and is consistent with the Si dimer dynamics, characterized by an instantaneous symmetriclike dimer configuration. The surface free carrier concentration in the metallic phase has been evaluated, reaching (at 1170 K) the same order of magnitude of the surface dimer density.
Gavioli, L., Betti, M. G., Mariani, C., Dynamics-induced surface metallization of Si(100), <<PHYSICAL REVIEW LETTERS>>, 1996; 77 (18): 3869-3872. [doi:10.1103/PhysRevLett.77.3869] [http://hdl.handle.net/10807/19995]
Dynamics-induced surface metallization of Si(100)
Gavioli, Luca;Betti, Maria Grazia;Mariani, Carlo
1996
Abstract
High-temperature surface metallization of Si(100) is observed at T > 900 K by high-resolution electron-energy-loss and ultraviolet photoemission spectroscopy. Metallization takes place well below the incomplete surface melting temperature and is consistent with the Si dimer dynamics, characterized by an instantaneous symmetriclike dimer configuration. The surface free carrier concentration in the metallic phase has been evaluated, reaching (at 1170 K) the same order of magnitude of the surface dimer density.
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