A high resolution fore-level photoemission investigation of 2D ordered Bi layers grown on Si(100)-(2 x 1) is presented. We study the Si 2p and Bi 5d core-levels at room temperature as a function of coverage and in the reconstructed phases. The different Bi structural configurations around the monolayer coverage and in the (2 x n)-reconstructed phase are derived from the core-level lineshape evolution. By following the Fermi level pinning, the presence of Bi-induced occupied electronic states close to the Si mid-gap is suggested. (C) 1999 Elsevier Science B.V. All rights reserved.
Corradini, V., Gavioli, L., Mariani, C., Core-level photoemission study of 2D ordered Bi/Si(100) interfaces, <<SURFACE SCIENCE>>, 1999; 430 (1-3): 126-136. [doi:10.1016/S0039-6028(99)00426-4] [http://hdl.handle.net/10807/20031]
Core-level photoemission study of 2D ordered Bi/Si(100) interfaces
Gavioli, Luca;Mariani, Carlo
1999
Abstract
A high resolution fore-level photoemission investigation of 2D ordered Bi layers grown on Si(100)-(2 x 1) is presented. We study the Si 2p and Bi 5d core-levels at room temperature as a function of coverage and in the reconstructed phases. The different Bi structural configurations around the monolayer coverage and in the (2 x n)-reconstructed phase are derived from the core-level lineshape evolution. By following the Fermi level pinning, the presence of Bi-induced occupied electronic states close to the Si mid-gap is suggested. (C) 1999 Elsevier Science B.V. All rights reserved.
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