An investigation and a comparison of the Bi-induced electronic states at the (2 X 1)-Bi/InSb(110) and (2 X 1)Bi/GaSb(110) interfaces is presented. The electronic transitions between Bi-induced states have been studied by high-resolution electron energy loss spectroscopy: a huge absorption structure is found at 0.48 eV in the stable (2 X 1) reconstructed phase for the Bi/InSb(110) interface, and at 0.55 eV for the (2 X 1)-Bi/GaSb(110) interface. This feature distinguishes an interband electronic transition between Bi-induced filled and empty electronic states, for both (2 X 1)-symmetry interfaces. Moreover, the Bi-induced occupied states are detected in the valence band for both systems, by ultra-violet photoemission spectroscopy.

Berselli, D., Betti, M. G., Gavioli, L., Mariani, C., BISMUTH-INDUCED ELECTRONIC STATES AT (2X1)-BI/III-V(110) INTERFACES, <<SURFACE SCIENCE>>, 1995; 331-333 (N/A): 496-500. [doi:10.1016/0039-6028(95)00092-5] [http://hdl.handle.net/10807/19984]

BISMUTH-INDUCED ELECTRONIC STATES AT (2X1)-BI/III-V(110) INTERFACES

Betti, Maria Grazia;Gavioli, Luca;Mariani, Carlo
1995

Abstract

An investigation and a comparison of the Bi-induced electronic states at the (2 X 1)-Bi/InSb(110) and (2 X 1)Bi/GaSb(110) interfaces is presented. The electronic transitions between Bi-induced states have been studied by high-resolution electron energy loss spectroscopy: a huge absorption structure is found at 0.48 eV in the stable (2 X 1) reconstructed phase for the Bi/InSb(110) interface, and at 0.55 eV for the (2 X 1)-Bi/GaSb(110) interface. This feature distinguishes an interband electronic transition between Bi-induced filled and empty electronic states, for both (2 X 1)-symmetry interfaces. Moreover, the Bi-induced occupied states are detected in the valence band for both systems, by ultra-violet photoemission spectroscopy.
1995
Inglese
Berselli, D., Betti, M. G., Gavioli, L., Mariani, C., BISMUTH-INDUCED ELECTRONIC STATES AT (2X1)-BI/III-V(110) INTERFACES, <<SURFACE SCIENCE>>, 1995; 331-333 (N/A): 496-500. [doi:10.1016/0039-6028(95)00092-5] [http://hdl.handle.net/10807/19984]
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/10807/19984
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