The fabrication of Mn-doped SiC materials by thermal reaction is an interesting method for obtaining SiC-based ferromagnetic semiconductors. Here we used x-ray photoemission and absorption measurements to study the reaction and diffusion of Mn in a 6 H-SiC single crystal substrate induced by a thermal treatment. In particular we have detected the formation of Mn-Si alloys completely covered by a graphene layer. The temperature dependence of the magnetization curves reveals the presence of two distinct magnetic phases. Interestingly, one of these phases displays ferromagnetic character at temperatures close to room temperature. (C) 2012 American Institute of Physics.{[doi:10.1063/1.3676286]}

Magnano, E., Bondino, F., Cepek, C., Sangaletti, L. E., Mozzati, M., Parmigiani, F., Ferromagnetism in graphene-Mn(x)Si(1-x) heterostructures grown on 6H-SiC(0001), <<JOURNAL OF APPLIED PHYSICS>>, 2012; 111 (1): 013917-1-013917-5. [doi:10.1063/1.3676286] [http://hdl.handle.net/10807/34051]

Ferromagnetism in graphene-Mn(x)Si(1-x) heterostructures grown on 6H-SiC(0001)

Magnano, Elena;Bondino, Federica;Cepek, Cinzia;Sangaletti, Luigi Ermenegildo;Parmigiani, Fulvio
2012

Abstract

The fabrication of Mn-doped SiC materials by thermal reaction is an interesting method for obtaining SiC-based ferromagnetic semiconductors. Here we used x-ray photoemission and absorption measurements to study the reaction and diffusion of Mn in a 6 H-SiC single crystal substrate induced by a thermal treatment. In particular we have detected the formation of Mn-Si alloys completely covered by a graphene layer. The temperature dependence of the magnetization curves reveals the presence of two distinct magnetic phases. Interestingly, one of these phases displays ferromagnetic character at temperatures close to room temperature. (C) 2012 American Institute of Physics.{[doi:10.1063/1.3676286]}
Inglese
Magnano, E., Bondino, F., Cepek, C., Sangaletti, L. E., Mozzati, M., Parmigiani, F., Ferromagnetism in graphene-Mn(x)Si(1-x) heterostructures grown on 6H-SiC(0001), <<JOURNAL OF APPLIED PHYSICS>>, 2012; 111 (1): 013917-1-013917-5. [doi:10.1063/1.3676286] [http://hdl.handle.net/10807/34051]
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/10807/34051
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