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EnglishThe epitaxial growth of cubic BiFeO3 ultrathin films on SrTiO3 (001) substrates by off-axis RF sputtering is demonstrated, suitable to X-ray spectroscopies interface investigation. X-ray photoelectron diffraction is used as a tool to probe the long-range crystal order and to track the transition from amorphous to epitaxial growth as a function of deposition parameters. Further spectroscopic measurements, in particular, X-ray linear dichroism on the Fe L 3, 2 edge, confirm the heteroepitaxial growth of BiFeO3 and clearly indicate a 3+ valence state for the iron cation. Finally, XPS is used to reconstruct the band alignment diagram, which results in a staggered configuration with a remarkable energy shift of the SrTiO3 band edges which can ultimately favor the n-type doping of SrTiO3.
Giampietri, A., Drera, G., Píš, I., Magnano, E., Sangaletti, L. E., Tracking the amorphous to epitaxial transition in RF-sputtered cubic BFO-STO heterojunctions by means of X-ray photoelectron diffraction, <<APPLIED PHYSICS LETTERS>>, 2016; 109 (13): N/A-N/A. [doi:10.1063/1.4963787] [http://hdl.handle.net/10807/98143]
| Autori: | |
| Titolo: | Tracking the amorphous to epitaxial transition in RF-sputtered cubic BFO-STO heterojunctions by means of X-ray photoelectron diffraction |
| Digital Object Identifier (DOI): | http://dx.doi.org/10.1063/1.4963787 |
| URL: | http://scitation.aip.org/content/aip/journal/apl |
| Data di pubblicazione: | 2016 |
| Abstract: | The epitaxial growth of cubic BiFeO3 ultrathin films on SrTiO3 (001) substrates by off-axis RF sputtering is demonstrated, suitable to X-ray spectroscopies interface investigation. X-ray photoelectron diffraction is used as a tool to probe the long-range crystal order and to track the transition from amorphous to epitaxial growth as a function of deposition parameters. Further spectroscopic measurements, in particular, X-ray linear dichroism on the Fe L 3, 2 edge, confirm the heteroepitaxial growth of BiFeO3 and clearly indicate a 3+ valence state for the iron cation. Finally, XPS is used to reconstruct the band alignment diagram, which results in a staggered configuration with a remarkable energy shift of the SrTiO3 band edges which can ultimately favor the n-type doping of SrTiO3. |
| Lingua: | Inglese |
| Rivista: | |
| Citazione: | Giampietri, A., Drera, G., Píš, I., Magnano, E., Sangaletti, L. E., Tracking the amorphous to epitaxial transition in RF-sputtered cubic BFO-STO heterojunctions by means of X-ray photoelectron diffraction, <<APPLIED PHYSICS LETTERS>>, 2016; 109 (13): N/A-N/A. [doi:10.1063/1.4963787] [http://hdl.handle.net/10807/98143] |
| Appare nelle tipologie: | Articolo in rivista, Nota a sentenza |
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