Experimental evidence of differences in the electronic properties of an insulating and a conducting SrTiO3/LaAlO3 interface is provided by soft x-ray spectroscopies. While core level photoemission measurements show that only at the conducting interface Ti ions with 3+ ionization state are present, by using resonant photoemission and x-ray absorption spectroscopies, it is shown that in both samples in-gap states with a Ti 3d character are present, but their density is higher at the conducting interface.
Drera, G., Banfi, F., Canova, F., Borghetti, P., Sangaletti, L. E., Bondino, F., Magnano, E., Huijben, J., Huijben, M., Rijnders, G., Blank, D., Hilgenkamp, H., Brinkman, A., Spectroscopic evidence of in-gap states at the SrTiO3/LaAlO3 ultrathin interfaces, <<APPLIED PHYSICS LETTERS>>, 2011; 98 (5): N/A-N/A. [doi:10.1063/1.3549177] [http://hdl.handle.net/10807/9126]
Spectroscopic evidence of in-gap states at the SrTiO3/LaAlO3 ultrathin interfaces
Drera, Giovanni;Banfi, Francesco;Sangaletti, Luigi Ermenegildo;
2011
Abstract
Experimental evidence of differences in the electronic properties of an insulating and a conducting SrTiO3/LaAlO3 interface is provided by soft x-ray spectroscopies. While core level photoemission measurements show that only at the conducting interface Ti ions with 3+ ionization state are present, by using resonant photoemission and x-ray absorption spectroscopies, it is shown that in both samples in-gap states with a Ti 3d character are present, but their density is higher at the conducting interface.
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