An angle-resolved photoemission spectroscopy study allowed us to identify cation interdiffusion and stoichiometry gradients at the interface between a nanosized TiO2 blocking layer and a transparent conductive Cd-Sn oxide substrate. A stoichiometry gradient for the Sn cations is already found in the bare Cd-Sn oxide layer. When TiO2 ultrathin layers are deposited by RF sputtering on the Cd-Sn oxide layer, Ti is found to partially replace Sn, resulting in a Cd-Sn-Ti mixed oxide layer with a thickness ranging from 0.85 to 3.3 nm. The band gap profile across the junction has been reconstructed for three TiO2 layers, resulting in a valence band offset decrease (and a conduction band offset increase) with the blocking layer thickness. The results are related to the cell efficiencies in terms of charge injection and recombination processes.

Salvinelli, G., Drera, G., Baratto, C., Braga, A., Sangaletti, L. E., Stoichiometry gradient, cation interdiffusion, and band alignment between a nanosized TiO2 blocking layer and a transparent conductive oxide in dye-sensitized solar cell front contacts, <<ACS APPLIED MATERIALS & INTERFACES>>, 2015; 2015 (7): 765-773 [http://hdl.handle.net/10807/66872]

Stoichiometry gradient, cation interdiffusion, and band alignment between a nanosized TiO2 blocking layer and a transparent conductive oxide in dye-sensitized solar cell front contacts

Salvinelli, Gabriele;Drera, Giovanni;Sangaletti, Luigi Ermenegildo
2015

Abstract

An angle-resolved photoemission spectroscopy study allowed us to identify cation interdiffusion and stoichiometry gradients at the interface between a nanosized TiO2 blocking layer and a transparent conductive Cd-Sn oxide substrate. A stoichiometry gradient for the Sn cations is already found in the bare Cd-Sn oxide layer. When TiO2 ultrathin layers are deposited by RF sputtering on the Cd-Sn oxide layer, Ti is found to partially replace Sn, resulting in a Cd-Sn-Ti mixed oxide layer with a thickness ranging from 0.85 to 3.3 nm. The band gap profile across the junction has been reconstructed for three TiO2 layers, resulting in a valence band offset decrease (and a conduction band offset increase) with the blocking layer thickness. The results are related to the cell efficiencies in terms of charge injection and recombination processes.
Inglese
Salvinelli, G., Drera, G., Baratto, C., Braga, A., Sangaletti, L. E., Stoichiometry gradient, cation interdiffusion, and band alignment between a nanosized TiO2 blocking layer and a transparent conductive oxide in dye-sensitized solar cell front contacts, <<ACS APPLIED MATERIALS & INTERFACES>>, 2015; 2015 (7): 765-773 [http://hdl.handle.net/10807/66872]
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/10807/66872
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