The quantitative description of low kinetic energy photoelectron emission in semiconductors is still an open question. In this article a model is developed to simulate the photoexcitation and transport of low kinetic energy electrons in Cs2Te. The statistical extension of the model, by Monte Carlo trajectory calculations, gives photon energy dependent quantum yields in agreement with experimental data. This is regarded as evidence that for near threshold photoemission in Cs2Te the dominant scattering mechanism is electron-phonon, while the mean energy scattering energy loss is 5 meV and the electron mean free path is 3 nm. The spatial distribution and the time response (0.4 ps) of the photoemitted electrons are estimated.
Ferrini, G., Michelato, P., Parmigiani, F., A Monte-Carlo simulation of low energy photoelectron scattering in Cs2Te, <<SOLID STATE COMMUNICATIONS>>, 1998; 106 (1): 21-26. [doi:10.1016/S0038-1098(97)10237-X] [http://hdl.handle.net/10807/36036]
A Monte-Carlo simulation of low energy photoelectron scattering in Cs2Te
Ferrini, Gabriele;Parmigiani, Fulvio
1998
Abstract
The quantitative description of low kinetic energy photoelectron emission in semiconductors is still an open question. In this article a model is developed to simulate the photoexcitation and transport of low kinetic energy electrons in Cs2Te. The statistical extension of the model, by Monte Carlo trajectory calculations, gives photon energy dependent quantum yields in agreement with experimental data. This is regarded as evidence that for near threshold photoemission in Cs2Te the dominant scattering mechanism is electron-phonon, while the mean energy scattering energy loss is 5 meV and the electron mean free path is 3 nm. The spatial distribution and the time response (0.4 ps) of the photoemitted electrons are estimated.
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