The interpretation of the n = 1 image potential state data on graphene on SiC is far from being clarified. In contrast with graphene grown on metallic substrates, graphene on SiC shows a very broad n=1 image state which is sometimes resolved in two different peaks. In literature the double feature has been ascribed to the presence of a second image state, due to the buffer layer when an incomplete graphene layer occurs, or, alternatively, has been identified as the double series of image states predicted for the free-standing graphene. Here, by varying the pump laser photon energy, in the non-linear photoemission experiment, we are able to reveal the presence of a resonance intensity of the image potential state that in principle could help to shed light on the origin of n=1 image state on graphene on SiC.

Ambrosio, G., Achilli, S., Pagliara, S., Resonance intensity of the n = 1 image potential state of graphene on SiC via two-photon photoemission, <<SURFACE SCIENCE>>, 2021; 703 (1): 121722-121726. [doi:10.1016/j.susc.2020.121722] [http://hdl.handle.net/10807/169737]

Resonance intensity of the n = 1 image potential state of graphene on SiC via two-photon photoemission

Ambrosio, G.;Achilli, S.;Pagliara, S.
2021

Abstract

The interpretation of the n = 1 image potential state data on graphene on SiC is far from being clarified. In contrast with graphene grown on metallic substrates, graphene on SiC shows a very broad n=1 image state which is sometimes resolved in two different peaks. In literature the double feature has been ascribed to the presence of a second image state, due to the buffer layer when an incomplete graphene layer occurs, or, alternatively, has been identified as the double series of image states predicted for the free-standing graphene. Here, by varying the pump laser photon energy, in the non-linear photoemission experiment, we are able to reveal the presence of a resonance intensity of the image potential state that in principle could help to shed light on the origin of n=1 image state on graphene on SiC.
Inglese
Ambrosio, G., Achilli, S., Pagliara, S., Resonance intensity of the n = 1 image potential state of graphene on SiC via two-photon photoemission, <<SURFACE SCIENCE>>, 2021; 703 (1): 121722-121726. [doi:10.1016/j.susc.2020.121722] [http://hdl.handle.net/10807/169737]
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/10807/169737
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